Moshe Eizenberg
Moshe
Eizenberg
Professor
Nano Area:
Faculty:
Ph.D.: Technion 1977
B.Sc.: Physics, Technion 1969
Main nano field
Silicon technology at the nanoscale.
Research Interestes
Self Assembled Diffusion Barriers for Copper Metallization in Advanced Microelectronic Devices.
Properties of HfO2 based high-k dielectrics.
Tuning of Fermi Level Position at Metal/High-k Dielectric Interfaces.
Metal / Crystalline Lanthanide Oxides – A New Gate Stack for Advanced Si Devices.