Moshe Eizenberg

Phone
+972-4-8294585

Ph.D.: Technion 1977

B.Sc.: Physics, Technion 1969

 

Main nano field

Silicon technology at the nanoscale.

 

Research Interestes

Self Assembled Diffusion Barriers for Copper Metallization in Advanced Microelectronic Devices.

Properties of HfO2 based high-k dielectrics.

Tuning of Fermi Level Position at Metal/High-k Dielectric Interfaces.

Metal / Crystalline Lanthanide Oxides – A New Gate Stack for Advanced Si Devices.